期刊
APPLIED PHYSICS LETTERS
卷 95, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3259816
关键词
carrier mobility; dielectric materials; monolayers; organic semiconductors; self-assembly; thin film transistors
资金
- WAKATE S
- NEDO
- Special Coordination Funds for Promoting Science and Technology
- Global COE Program on Physical Sciences Frontier, MEXT [20676005]
- Grants-in-Aid for Scientific Research [20676005] Funding Source: KAKEN
We have fabricated pentacene organic thin-film transistors (TFTs) using self-assembled monolayers (SAMs) based on alkyl-phosphonic acids with five different alkyl chain lengths as the gate dielectric and investigated the relationship between the SAM chain length and the electrical performance and stability of the transistors. A SAM chain length of 14 carbon atoms provides a maximum TFT mobility of 0.7 cm(2)/V s, along with an on/off current ratio greater than 10(5). We have also investigated the bias stress effect in these TFTs and found that the change in drain current is substantially less severe than in pentacene TFTs with polymer gate dielectrics.
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