期刊
APPLIED PHYSICS LETTERS
卷 95, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3206658
关键词
carrier density; field effect transistors; fluctuations; graphene; multilayers
资金
- Department of Science and Technology (DST)
- CSIR
We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices, the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.
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