期刊
APPLIED PHYSICS LETTERS
卷 95, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3280375
关键词
band structure; binding energy; doping; Fermi level; impurity distribution; impurity states; localised states; surface segregation; vacancies (crystal); valence bands; vanadium compounds
资金
- WNLO innovation [P080004]
Vanadium vacancies introduce acceptor doping with hole localization, while oxygen vacancies cause electron localization and donor doping. As deposition temperature increases, donor concentration stays constant, whereas acceptor concentration significantly increases, leading to enhanced (011) lattice-plane compression and surface segregation. Localized charges result in shifts of O 1s and V4+ 2p core levels toward higher binding energies, and O 2p and V4+ 3d valence bands toward the Fermi level, but e(g)(pi) bands lifting and a(1g) bands splitting energies are both insensitive to charge localization. Particularly, band-gap energy decreases with increasing V-V pair distance, and is significantly reduced by band tailing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据