4.6 Article

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Higher-k LaYOx films with strong moisture resistance

Yi Zhao et al.

APPLIED PHYSICS LETTERS (2006)

Article Physics, Applied

Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto et al.

APPLIED PHYSICS LETTERS (2006)

Review Materials Science, Multidisciplinary

Nanoindentation studies of materials

Christopher A. Schuh

MATERIALS TODAY (2006)

Review Physics, Applied

High dielectric constant oxides

J Robertson

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2004)

Article Electrochemistry

MOCVD of high-dielectric-constant lanthanum oxide thin films

H Yamada et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2003)

Article Physics, Applied

Infrared and electrical properties of amorphous sputtered (LaxAl1-x)2O3 films

RAB Devine

JOURNAL OF APPLIED PHYSICS (2003)

Article Physics, Applied

Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric

JH Jun et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2003)