期刊
APPLIED PHYSICS LETTERS
卷 94, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3075954
关键词
doping profiles; elemental semiconductors; energy gap; gold; high-k dielectric thin films; lanthanum compounds; leakage currents; MIM devices; MIS capacitors; permittivity; platinum; silicon; yttrium compounds
资金
- Ministry of Education, Culture, Sports, Science and Technology in Japan
In this study, we prepare the well crystallized La2O3 films by doping Y2O3 with different contents (La2-xYxO3) and examine the dielectric and electrical properties of La2-xYxO3 films experimentally. It is found that the optical band gap of La2-xYxO3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10(-5) A/cm(2) (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/La2-xYxO3/Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/La2-xYxO3/Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据