期刊
APPLIED PHYSICS LETTERS
卷 95, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3251784
关键词
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资金
- Next-generation Nonvolatile Memory Program of the Ministry of Knowledge Economy [10029953-2009-31]
- Korea Research Foundation Grant (MOEHRD) [KRF-2008-005-J00902]
- National Research Council of Science & Technology (NST), Republic of Korea [K09007] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3251784]
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