期刊
APPLIED PHYSICS LETTERS
卷 95, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3176410
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资金
- Nanyang Technological University and Ministry of Education of Singapore [RG53/08, RG59/06, T207B1217]
- Singapore A*star SERC [062 101 0030]
We report stable room temperature ferromagnetism in nitrogen doped In2O3 (N-In2O3) based on density functional theory. Our investigation on the electronic and magnetic properties of N-In2O3 suggests that N dopant introduces spin-polarized hole states in the band gap generating a total magnetic moment of 1.0 mu(B) per N, which is mainly localized on the doped N atoms. The ferromagnetic interaction in N-In2O3 system is mainly driven by the occurrence of coupling chains between a first N (N1)-2p to a second N (N2)-2p via a bridging In 5p and 4d orbitals. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3176410]
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