4.6 Article

Phase stability of cubic Mg0.55Zn0.45O thin film studied by continuous thermal annealing method

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 10, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3097022

关键词

annealing; II-VI semiconductors; magnesium compounds; MOCVD; segregation; semiconductor thin films; wide band gap semiconductors; X-ray diffraction; zinc compounds

资金

  1. National Natural Science Foundation of China [50532050, 60706021]
  2. 973 Program [2008CB317105, 2006CB604906]
  3. Chinese Academy of Sciences [KJCX3.SYW.W01]

向作者/读者索取更多资源

The phase stability of cubic Mg0.55Zn0.45O thin film grown by metal-organic chemical vapor deposition was studied through continuous thermal annealing. The crystal quality and surface smoothness were greatly improved after a continuous thermal annealing at 750 degrees C. It is attributed to the reducing of interstitial Zn by thermal annealing. However, phase segregation occurred when the sample was annealed at a higher temperature (850 degrees C), which is identified from both x-ray diffraction patterns and optical transmission spectra.

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