期刊
APPLIED PHYSICS LETTERS
卷 95, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3266836
关键词
graphene; II-VI semiconductors; MOCVD; nanofabrication; nanostructured materials; nucleation; photoluminescence; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds
资金
- Korea Science and Engineering Foundation (KOSEF) [R16-2004-004-01001-0]
We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.
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