4.6 Article

Vertically aligned ZnO nanostructures grown on graphene layers

期刊

APPLIED PHYSICS LETTERS
卷 95, 期 21, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3266836

关键词

graphene; II-VI semiconductors; MOCVD; nanofabrication; nanostructured materials; nucleation; photoluminescence; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds

资金

  1. Korea Science and Engineering Foundation (KOSEF) [R16-2004-004-01001-0]

向作者/读者索取更多资源

We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据