期刊
APPLIED PHYSICS LETTERS
卷 94, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3077310
关键词
copper; electrochemical electrodes; integrated circuit metallisation; iridium; platinum; random-access storage; silicon compounds; thin films
资金
- DFG/JST
The kinetics of the switching process in Cu-SiO2-based electrochemical metallization memory cells was investigated as a function of the switching voltage and the SiO2 film thickness. We observe an exponential dependence of the switching rate on the switching voltage and no significant thickness dependence in the range from 5 to 20 nm SiO2. We conclude from our data that the cathodic electrodeposition represents the rate-limiting step of the switching kinetics. The voltage-time dilemma seems to be overcome by the exponential dependence of the switching rate in combination with a threshold voltage presumably originating from a nucleation overpotential.
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