期刊
APPLIED PHYSICS LETTERS
卷 94, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3115826
关键词
charge injection; organic field effect transistors; wide band gap semiconductors
资金
- Nippon Kayaku Co.
- Hiroshima University
- Nagoya University
The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.
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