Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation

A ZnO-based metal-insulator-semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I-V dependences show a good rectifying diode-like behavior with a low leakage current of 10(-6) A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.