期刊
APPLIED PHYSICS LETTERS
卷 95, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3259720
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资金
- Bundesministerium fur Bildung und Forschung [FKZ 13N9279]
- Deutsche Forschungsgemeinschaft [LE747/37-1]
The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflectivity values of 87% around 500 nm after the oxidation process and 90% around 600 nm after the etching process ill overall good agreement with simulations. The broad stopband of airgap/GaN mirrors, about 250 nm wide. results from the strong refractive index contrast between air and GaN layers. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3259720]
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