Exact evaluation of interface-reaction-limited growth in dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces

The kinetics of dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces were systematically examined to clarify the interface-reaction-limited growth depending on the oxidizing agent. A gradually retarded oxide growth in the early stage of oxidation (<15 nm) and then a linear growth corresponding to a real interface-reaction-limited growth extending to 150 nm in oxide thickness were observed regardless of the oxidation ambient. It was also found that, unlike in the case of Si oxidation, water oxidants play no significant role in enhancing SiC oxidation. The initial retarded oxidation rate and characteristic linear regime are discussed on the basis of the SiO2/SiC interfacial structures. (C) 2015 The Japan Society of Applied Physics