4.6 Article

Resistance switching in a single-crystalline NiO thin film grown on a Pt0.8Ir0.2 electrode

期刊

APPLIED PHYSICS LETTERS
卷 95, 期 1, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3179169

关键词

-

资金

  1. JSPS
  2. NEDO
  3. [19GS0207]
  4. [18350097]
  5. [18655076]

向作者/读者索取更多资源

A single-crystalline NiO thin film was grown epitaxially on an atomically flat Pt0.8Ir0.2 bottom electrode layer grown epitaxially on a SrTiO3(100) substrate. The memory cells of the single-crystalline NiO thin film with Pt top electrodes showed unipolar resistance switching behaviors. The result demonstrates that a unipolar resistance switching is not a characteristic phenomenon in the polycrystalline NiO but it can also occur in the single-crystalline NiO. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3179169]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据