期刊
APPLIED PHYSICS LETTERS
卷 94, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3148657
关键词
atomic force microscopy; brightness; buffer layers; current density; indium compounds; iron compounds; metallic thin films; organic light emitting diodes; tin compounds; ultraviolet photoelectron spectra; X-ray spectroscopy
资金
- NSFC [60677016, 60525412, 60877019]
- NECT [070354]
- Jilin Provincial Science and Technology Bureau [20070109]
Hole injection improvement in organic light-emitting devices with Fe3O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3O4/ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3O4 thin film between the ITO and hole-transporting layer.
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