Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles

Multilevel conductance switching in organic memory devices based on AlQ(3) and Al/Al2O3 core-shell nanoparticles is demonstrated. The effect of middle Al layer thickness and the size of the nanoparticles on device performance are investigated. The high-resolution transmission electron micrographs revealed the formation of core-shell nanoparticles. The device has shown a series of conductance states. These states are nonvolatile in nature and can be accessed by applying proper programming voltage above a threshold voltage. Field-induced transfer of charge carriers between AlQ(3) and aluminum core is proposed to be responsible for conductance switching.