期刊
APPLIED PHYSICS LETTERS
卷 94, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3168523
关键词
carrier mobility; organic field effect transistors; organic semiconductors; permittivity; plasma materials processing; silicon compounds
High-performance pentacene (mu(sat)=6.3 cm(2)/V s) and poly(3-hexylthiophene) (mu(sat)=0.43 cm(2)/V s) field effect transistors have been realized on flexible substrate with low operating voltage (<-5 V), utilizing a trilayer sol-gel silica gate dielectric. Furthermore, the permittivity of the dielectric was tuned from similar to 7 to similar to 10 by varying plasma treatments, allowing the study of charge carrier mobility variation with k. A 65% reduction in the saturation mobility of the devices was observed when k increases, suggesting that the energetic disorder at the interface between the active layer and the dielectric can be modulated by the high polarizability of the bulk dielectric.
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