期刊
APPLIED PHYSICS LETTERS
卷 95, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3187532
关键词
amorphous semiconductors; gallium compounds; indium compounds; plasma CVD; thin film transistors; zinc compounds
资金
- Portuguese Foundation for Science and Technology [PTDC/EEA-ELC/64975/2006, PTDC/CTM/73943/2006]
- Fundação para a Ciência e a Tecnologia [PTDC/EEA-ELC/64975/2006, SFRH/BSAB/143018/2018, PTDC/CTM/73943/2006] Funding Source: FCT
A quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium zinc oxide amorphous thin-film transistors is presented using standard analysis based on the stretched exponential relaxation. For devices using thermal silicon oxide as gate dielectric, the relaxation time is 3x10(5) s at room temperature with activation energy of 0.68 eV. These transistors approach the stability of the amorphous silicon transistors. The threshold voltage shift is faster after water vapor exposure suggesting that the origin of this instability is charge trapping at residual-water-related trap sites.
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