期刊
APPLIED PHYSICS LETTERS
卷 94, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3075060
关键词
aluminium compounds; conduction bands; energy gap; high electron mobility transistors; III-V semiconductors; magnesium compounds; passivation; semiconductor heterojunctions; valence bands; wide band gap semiconductors; X-ray photoelectron spectra
资金
- 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
- Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]
- National Science Foundation of China [60506002, 60776015]
MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E(v)) of MgO/AlN heterostructures. A value of Delta E(v)=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.
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