期刊
APPLIED PHYSICS LETTERS
卷 94, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3120225
关键词
diamond; elemental semiconductors; energy gap; Hall effect; nitrogen; photoconductivity
资金
- NSF
We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of similar to 3 hours. By measuring the photoexcited Hall effect, we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at similar to 1.9 eV. These findings shed light on sub-bandgap states in nitrogen-doped single-crystal diamond.
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