期刊
APPLIED PHYSICS LETTERS
卷 94, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3100407
关键词
current density; dark conductivity; gallium arsenide; III-V semiconductors; indium compounds; resonant tunnelling; semiconductor quantum dots; terahertz wave detectors
资金
- Air Force Office of Scientific Research [FA9550-06-1-0500]
- National Science Foundation [ECS-0620688]
The electronic properties of InAs/GaAs quantum rings and the characteristics of resonant tunnel intersubband terahertz detectors with quantum ring active regions have been studied. The electronic states of the quantum rings have been calculated and measured by the capacitance-voltage technique. The detectors exhibit extremely low dark current density values similar to 5x10(-5), 4.7x10(-2), and 3.5x10(-1) A/cm(2) under a -1 V bias at 4.2, 80, and 300 K, respectively. Three prominent response peaks are observed at similar to 6.5, 10, and 12.5 THz up to T=120 K. At 80 K, the responsivity of the peaks varies from 0.07 to 0.02 A/W.
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