期刊
APPLIED PHYSICS LETTERS
卷 95, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3266524
关键词
carrier mobility; graphene; quantum Hall effect; semiconductor epitaxial layers
资金
- NSF [DMR-0820382, DMR-0654118]
- W. M. Keck Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
The quantum Hall effect, with a Berry's phase of pi is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is similar to 20 000 cm(2)/V center dot s at 4 K and 15 000 cm(2)/V center dot s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.
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