期刊
APPLIED PHYSICS LETTERS
卷 94, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3114420
关键词
aluminium compounds; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; semiconductor superlattices
资金
- U. S. Air Force [FA9550-09-C-0106]
- U. S. NSF [ECCS-0620688]
A dual-band superlattice quantum dot infrared photodetector, providing bias-selectability of the response peaks, is demonstrated. The active region consists of two quantum dot superlattices separated by a graded barrier, enabling photocurrent generation only in one superlattice for a given bias polarity. Two response bands, one consisting of three peaks at 2.9, 3.2, and 4.9 mu m and the other consisting of three peaks at 4.4, 7.4, and 11 mu m, were observed up to 120 K for reverse and forward biases, respectively. The specific detectivity values at 80 K are 3.2 and 2.6x10(9) Jones for the 4.9 and 7.4 mu m peaks.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据