4.6 Article

A pentacene-based organic thin film memory transistor

期刊

APPLIED PHYSICS LETTERS
卷 94, 期 17, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3126021

关键词

nanoparticles; semiconductor storage; thin film transistors

资金

  1. Science and Engineering Research Council [EP/D039924/1]
  2. School of Engineering, Durham University
  3. EPSRC [EP/D039924/1] Funding Source: UKRI

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An organic memory device based on a pentacene thin film transistor is demonstrated. Gold nanoparticles have been used as the charge storage elements while a thin film of polymethylmethacrylate formed the gate insulator. The electrical characteristics and the memory behavior of the organic thin film memory transistor (OTFMT) are reported. Under an appropriate gate bias (1 s pulses), the gold nanoparticles are charged and discharged, resulting in significant threshold voltage shifts of the OTFMT. The detailed programing and erasing procedures are reported.

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