期刊
APPLIED PHYSICS LETTERS
卷 94, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3126021
关键词
nanoparticles; semiconductor storage; thin film transistors
资金
- Science and Engineering Research Council [EP/D039924/1]
- School of Engineering, Durham University
- EPSRC [EP/D039924/1] Funding Source: UKRI
An organic memory device based on a pentacene thin film transistor is demonstrated. Gold nanoparticles have been used as the charge storage elements while a thin film of polymethylmethacrylate formed the gate insulator. The electrical characteristics and the memory behavior of the organic thin film memory transistor (OTFMT) are reported. Under an appropriate gate bias (1 s pulses), the gold nanoparticles are charged and discharged, resulting in significant threshold voltage shifts of the OTFMT. The detailed programing and erasing procedures are reported.
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