期刊
APPLIED PHYSICS LETTERS
卷 94, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3119636
关键词
amorphous semiconductors; dielectric thin films; elemental semiconductors; hydrogenation; plasma CVD; semiconductor thin films; silicon; silicon compounds; thin film transistors
资金
- Universal Display Corporation
A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities. The dielectric is a homogeneous SiO2-silicone hybrid, which is deposited by plasma-enhanced chemical vapor deposition system at nominal room temperature. This new dielectric results in a-Si:H TFTs with measured field-effect mobilities of similar to 2 cm(2)/V s for electrons and similar to 0.1 cm(2)/V s for holes.
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