4.6 Article

Emission of terahertz radiation from SiC

期刊

APPLIED PHYSICS LETTERS
卷 95, 期 5, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3194152

关键词

nonlinear optical susceptibility; silicon compounds; terahertz wave spectra; wide band gap semiconductors

资金

  1. National Science Foundation
  2. Air Force Office of Scientific Research [FA9550-07-1-0332]
  3. Cornell Material Science and Engineering Center (CCMR) of the National Science Foundation [0520404]
  4. Direct For Mathematical & Physical Scien
  5. Division Of Materials Research [0520404] Funding Source: National Science Foundation

向作者/读者索取更多资源

We report the emission of strong coherent broadband terahertz radiation from 6H-silicon-carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements chi((2))(zzz)/chi((2))(zxx) and the complex index of refraction of silicon carbide at terahertz frequencies.

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