期刊
APPLIED PHYSICS LETTERS
卷 94, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3078399
关键词
alumina; atomic layer deposition; binding energy; conduction bands; dielectric thin films; electron energy loss spectra; energy gap; gallium arsenide; hafnium compounds; indium compounds; semiconductor-insulator boundaries; tunnelling; valence bands; X-ray photoelectron spectra
资金
- Department of Natural Sciences at National Science Council [NSC-97-2120-M-007-008, NSC-96-2628-M-007-003-MY3]
X-ray photoelectron spectroscopy (XPS) combined with reflection electron energy loss spectroscopy (REELS) were used to determine the energy-band parameters, valence-band offsets Delta E-V, conduction-band offsets Delta E-C, and energy-band gaps E-g, of the atomic layer deposited (ALD) Al2O3 and HfO2 on InxGa1-xAs (x=0, 0.15, 0.25, and 0.53). Using REELS, E-g values of the ALD-Al2O3 and -HfO2 were estimated to be 6.77 and 5.56 +/- 0.05 eV, respectively. The Delta E-V's were determined by measuring the core level to valence band maximum binding energy difference from the XPS spectra. The Delta E-C's were then extracted from Delta E-V's and the energy-band gaps of the oxides and InxGa1-xAs, and are in good agreement with those estimated from the Fowler-Nordheim tunneling. The Delta E-C's and Delta E-V's are larger than 1.5 and 2.5 eV, respectively, for all the ALD-oxide/InxGa1-xAs samples.
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