期刊
APPLIED PHYSICS LETTERS
卷 95, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3279149
关键词
doping profiles; electrical resistivity; gallium compounds; Hall effect; hole density; hole mobility; III-V semiconductors; impurity states; indium compounds; magnesium; MOCVD; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; spectral line intensity; wide band gap semiconductors
资金
- NSF [DMR0906879]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0906879] Funding Source: National Science Foundation
Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (E-A) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed E-A in Mg-doped In0.35Ga0.65N alloys was about 43 meV, which is roughly four times smaller than that in Mg doped GaN. A room temperature resistivity as low as 0.4 cm (with a hole concentration similar to 5x10(18) cm(-3) and hole mobility similar to 3 cm(2)/V s) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据