相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Random circuit breaker network model for unipolar resistance switching
Seung Chul Chae et al.
ADVANCED MATERIALS (2008)
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
I. H. Inoue et al.
PHYSICAL REVIEW B (2008)
Effect of electrode material on the resistance switching of Cu2O film
Woo-Young Yang et al.
APPLIED PHYSICS LETTERS (2007)
Two series oxide resistors applicable to high speed and high density nonvolatile memory
Myoung-Jae Lee et al.
ADVANCED MATERIALS (2007)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre
Jonathan E. Green et al.
NATURE (2007)
Power-law voltage acceleration:: A key element for ultra-thin gate oxide reliability
EY Wu et al.
MICROELECTRONICS RELIABILITY (2005)
Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
C Rohde et al.
APPLIED PHYSICS LETTERS (2005)
Reproducible resistance switching in polycrystalline NiO films
S Seo et al.
APPLIED PHYSICS LETTERS (2004)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
