4.6 Article

Time-dependent electroforming in NiO resistive switching devices

期刊

APPLIED PHYSICS LETTERS
卷 95, 期 14, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3242337

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资金

  1. Korea Research Council for Industrial Science and Technology
  2. KOSEF NRL Program
  3. Korea government MEST [R0A-2008-000-20052-0]
  4. KOSEF by MEST [2008-02557, R31-2008-000-10057-0]
  5. Seoul R BD Program [WR090671]
  6. Korea MEST
  7. Quantum Metamaterials Research Center [R11-2008-053-03002-0]
  8. National Research Foundation of Korea [R0A-2008-000-20052-0, 2008-02557] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Time-dependent electroforming phenomena in NiO capacitors are investigated. Different current-voltage characteristics between dc sweep mode and pulse mode indicate that electroforming is time-dependent process. Statistical time-dependent dielectric breakdown (TDDB) measurements show the exponential dependence of electroforming time on applied voltage, confirming that forming process is not a spontaneous process at some critical voltage, but an upsurge process resulting from stress-induced defects. The statistical TDDB analysis explains not only the nature of electroforming process but also the anomalous forming and large variations in forming parameters. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242337]

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