期刊
APPLIED PHYSICS LETTERS
卷 95, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3211111
关键词
bonds (chemical); capacitance; dielectric devices; microswitches; nanoelectromechanical devices; vacancies (crystal)
We investigate the effect of surface and interior defects such as vacancies and broken bonds on the performance of nano/microelectromechanical (N/MEMS) switches. By combining multiscale electrostatic analysis with mechanical analysis, we compute the capacitance-voltage and pull-in/out voltages of N/MEMS switches in the presence of defects in the dielectric oxide layer. Our results indicate that both surface and interior defects can change the pull-in/out voltages leading to significant voltage offsets. These voltage offsets can lead to an eventual failure of the N/MEMS switch.
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