期刊
APPLIED PHYSICS LETTERS
卷 95, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3186076
关键词
electron spin polarisation; gallium arsenide; g-factor; high-speed optical techniques; III-V semiconductors; semiconductor thin films; Zeeman effect
资金
- Chinese-French PRA
- National Science Foundation of China [PRA MX06-07, 10534030, 10774183]
- National Basic Research Program of China [2006CB921300973]
We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.
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