期刊
APPLIED PHYSICS LETTERS
卷 95, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3204465
关键词
dielectric materials; gallium arsenide; III-V semiconductors; indium compounds; MOS capacitors; zirconium compounds
资金
- Semiconductor Research Corporation through the Nonclassical CMOS Research Center [1437.003]
- Intel Custom Funding [1635.002]
- Alexander-von-Humboldt Foundation through a Feodor-Lynen fellowship
- UCSB Nanofabrication Facility
- NSF-funded NNIN network.
Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2x4) reconstructed, n-type In0.53Ga0.47As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2/In0.53Ga0.47As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.
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