Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2x4) reconstructed, n-type In0.53Ga0.47As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2/In0.53Ga0.47As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.