4.6 Article

Erbium-doped GaN optical amplifiers operating at 1.54 μm

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

R. Dahal et al.

APPLIED PHYSICS LETTERS (2008)

Article Physics, Applied

Infrared luminescence and amplification properties of Bi-doped GeO2-Ga2O3-Al2O3 glasses

Shifeng Zhou et al.

JOURNAL OF APPLIED PHYSICS (2008)

Article Physics, Applied

Er3+-doped boro-tellurite glass for optical amplification in the 1530-1580 nm

Purushottam Joshi et al.

JOURNAL OF APPLIED PHYSICS (2008)

Article Physics, Applied

Extraordinary optical gain from silicon implanted with erbium

M. A. Lourenco et al.

APPLIED PHYSICS LETTERS (2007)

Article Physics, Applied

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

C. Ugolini et al.

APPLIED PHYSICS LETTERS (2006)

Article Physics, Applied

Propagation loss in GaN-based ridge waveguides

O Skorka et al.

APPLIED PHYSICS LETTERS (2004)

Article Physics, Applied

Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide

HS Han et al.

APPLIED PHYSICS LETTERS (2001)

Article Physics, Applied

Demonstration of optical gain at 1.06 μm in a neodymium-doped polyimide waveguide

G Karve et al.

APPLIED PHYSICS LETTERS (2000)