期刊
APPLIED PHYSICS LETTERS
卷 95, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3225555
关键词
amorphous semiconductors; gallium compounds; indium compounds; organic field effect transistors; semiconductor growth; sol-gel processing; thin film transistors
资金
- Ministry of Education, Science, and Technology [R0A-2005-000-10011-0]
- National Research Foundation of Korea [R0A-2005-000-10011-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO)-based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.
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