期刊
APPLIED PHYSICS LETTERS
卷 95, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3184566
关键词
electron-phonon interactions; II-VI semiconductors; nanostructured materials; perturbation theory; photoexcitation; photoluminescence; spectral line shift; wide band gap semiconductors; zinc compounds
资金
- NSF [10772157, 10802071]
- Hunan Province, Shanghai NSF [07ZR14033]
- Pujiang Program [08PJ14043]
- Special Project for Nanotechnology [0752nm011]
- Applied Materials Shanghai Research & Development Fund of Shanghai, China [07SA12]
Although the size- and shape-induced blueshift in the photoluminescence and photoabsorption of nanostructured ZnO has been extensively investigated, the underlying mechanism remains yet unclear. Here we show that theoretical reproduction of the observed trends clarifies that the blueshift originates from the Hamiltonian perturbation due to the broken-bond-induced local strain and quantum trapping and electron-phonon coupling in the surface skin up to two atomic layers in depth while bonds in the core interior retain their bulk nature. The extent of the blue shift depends on the tunable fraction of undercoordinated atoms in the surface skin. Therefore, the quantum confinement effect is indeed more superficial than first thought [H. Winn, OE Mag. 8, 10 (2005)].
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