期刊
APPLIED PHYSICS LETTERS
卷 94, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3153504
关键词
aluminium compounds; bending strength; carrier density; crystal resonators; dielectric resonators; gallium compounds; high electron mobility transistors; III-V semiconductors; two-dimensional electron gas
资金
- French National Agency (ANR) [ANR-08-NANO023]
A fully integrated electromechanical resonator is described that is based on high mobility piezoelectric semiconductors for actuation and detection of nanoscale motion. We employ the two-dimensional electron gas present at an AlGaN/GaN interface and the piezoelectric properties of this heterostructure to demonstrate a resonant high-electron-mobility transistor enabling the detection of strain variation. In this device, we take advantage of the polarization field divergence originated by mechanical flexural modes for generating piezoelectric doping. This enables a modulation of carrier density which results in a large current flow and thus constitutes a motion detector with intrinsic amplification.
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