期刊
APPLIED PHYSICS LETTERS
卷 94, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3155428
关键词
cadmium compounds; carrier density; II-VI semiconductors; magnetoelectronics; optical pumping; spin dynamics; time resolved spectra; wide band gap semiconductors
资金
- National Natural Science Foundation of China [10774099]
- Program for Professor of a Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, Science and Technology Commission of Shanghai Municipal [06PJ14042]
Excitation photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal was studied by time resolved pump-probe reflectivity technique at room temperature. The results show that spin relaxation time decreases monotonously. While with increasing excitation carrier density, the time constants increases initially then decreases after reaching a maximum value. Our experimental results reveal that both D'yakonov-Perel' [M. I. D'yakonov and V. I. Perel', Sov. Phys. JETP 38, 177 (1974)] and Elliot-Yafet [R. J. Elliott, Phys. Rev. 96, 266 (1954); Y. Yafet, Solid State Phys. 14, 1 (1963)] mechanisms dominate the spin relaxation process in CdTe crystal.
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