期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3168521
关键词
annealing; low-k dielectric thin films; nanoporous materials; nanotechnology; organic compounds; permittivity; plasma CVD; X-ray scattering
This paper focuses on the structure of nanoporous SiOCH thin films deposited using a porogen approach by plasma enhanced chemical vapor deposition (PECVD). The grazing incidence small angle x-ray scattering signal demonstrates the existence of a biphase pattern in hybrid films, deposited by PECVD. After porogen removal, there are few differences between pore pattern of optimized ultraviolet (UV) illuminated and thermally treated samples: anisotropy of the pore pattern is observed in both samples, probably due to the porogen degradation. Finally, a kinetic study of porogen degradation by UV shows that the porous structure develops in only a few minutes.
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