期刊
APPLIED PHYSICS LETTERS
卷 95, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3179166
关键词
annealing; carrier mobility; crystal structure; organic semiconductors; semiconductor thin films; thin film transistors; X-ray diffraction
资金
- WAKATE S
- Promoting Science and Technology
- MEXT, Japan
We have systematically investigated the effects of annealing on the structures and electronic performances of pentacene field-effect transistors on polyimide gate dielectric layers. The mobility of these transistors increases from 0.07 to 0.12 cm(2)/V s by annealing at 140 degrees C. The density of charge traps can be reduced by annealing, thereby resulting in the improvement of the transistor characteristics. The x-ray diffraction measurements indicate that the crystal structure of pentacene on polyimide does not change after annealing up to 140 degrees C, while the crystal structure of pentacene on Si/SiO2 exhibits transitions from the (001) thin film phase to the bulk phase.
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