期刊
APPLIED PHYSICS LETTERS
卷 94, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3156031
关键词
II-VI semiconductors; iridium compounds; Schottky barriers; Schottky diodes; semiconductor-insulator boundaries; wide band gap semiconductors; zinc compounds
资金
- ARL [W911NF-07-2-0064]
- ARO [W911NF0510334, W911NF0910140]
- Marsden Grant [UOC0604]
A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A(*)) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx/n-ZnO Schottky diodes. A homogeneous A(*) value of 27 +/- 7 A cm(-2) K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm(-2) K-2 for n-type ZnO.
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