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A Vardi et al.
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L Doyennette et al.
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M Tchernycheva et al.
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Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells
J Hamazaki et al.
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Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells
R Rapaport et al.
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K Moumanis et al.
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Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
N Iizuka et al.
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Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
JD Heber et al.
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AD Andreev et al.
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