期刊
APPLIED PHYSICS LETTERS
卷 94, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3112602
关键词
cryogenics; drag; elemental semiconductors; Hall effect devices; silicon
We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.
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