相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1-xAs
M. L. Huang et al.
APPLIED PHYSICS LETTERS (2009)
Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
V. V. Afanas'ev et al.
APPLIED PHYSICS LETTERS (2008)
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
N. V. Nguyen et al.
APPLIED PHYSICS LETTERS (2008)
Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As
M. Kobayashi et al.
APPLIED PHYSICS LETTERS (2008)
Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters
Y. C. Chang et al.
APPLIED PHYSICS LETTERS (2008)
Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
V. V. Afanas'ev et al.
APPLIED PHYSICS LETTERS (2008)
Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
V. V. Afanas'ev et al.
JOURNAL OF APPLIED PHYSICS (2007)
Band offsets of high K gate oxides on III-V semiconductors
J. Robertson et al.
JOURNAL OF APPLIED PHYSICS (2006)