期刊
APPLIED PHYSICS LETTERS
卷 95, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3178556
关键词
bending; electrical resistivity; elemental semiconductors; semiconductor growth; silicon
资金
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT).
- Grants-in-Aid for Scientific Research [20226010] Funding Source: KAKEN
Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 , confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据