期刊
APPLIED PHYSICS LETTERS
卷 95, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3276694
关键词
charge injection; contact resistance; gold; monolayers; organic field effect transistors; organic semiconductors; semiconductor-metal boundaries; tunnel transistors
资金
- DFG [PF385]
We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37 meV (NL) and 104 meV (PQ) below 190 K, which are smaller than without functionalization, 117 meV.
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