Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm

We report the growth and optical characterization of InAsSb/InAs strain balanced superlattice structures on GaSb substrates for potential application in midinfrared photodetectors. Photoluminescence (PL) emission was observed in the range 5 mu m < 10 mu m at 4 K for Sb compositions 0.14 < x(Sb)< 0.27. The PL energy was found to depend approximately linearly on antimony, consistent with a type II band lineup. The dependence of the emission energies on the Sb mole fraction is in agreement with trends predicted by various theoretical works. The data suggest that this transition reaches zero energy for a composition of x(Sb)=0.37.