期刊
APPLIED PHYSICS LETTERS
卷 95, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3238361
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资金
- KAKENHI
- ICR
- Asahi Glass Foundation
- Sumitomo Foundation
- JSPS
We show that the large positive magnetoresistance in nonmagnetic silicon devices can be controlled by a current applied in the non-Ohmic transport regime. The experimental results indicate that the carrier transport in this regime is dominated by the space-charge effect, where the magnetoresistance effect is greatly enhanced. We propose a device concept based on the space-charge-induced magnetoresistance effect in silicon that is controlled by both the current and the magnetic field, which looks similar to the characteristics of the field-effect transistors. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238361]
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