期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 54, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.54.06FG05
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资金
- National Science Council of the Republic of China [NSC 101-2221-E-009-077-MY3]
Transparent ultraviolet (UV) detectors with nanoheterojunctions (NHJs) of p-type NiO and n-type ZnO nanowires (ZnO-NWs) were successfully fabricated using a DC sputtering system and a hydrothermal process, respectively. After annealing in nitrogen ambient, the near-band-edge emission to deep level emission ratio (NBE/DLE) of ZnO-NWs gradually increased as the temperature increased and reached a maximum of 28.9 at a temperature setting of 500 degrees C. In contrast, after annealing in oxygen atmosphere, the NBE/DLE of ZnO-NWs initially increased from 1.2 to 5.9 and then decreased to 3.2. At a reverse bias of 2V, the devices with the 500-degrees C-N-2-annealed ZnO-NWs exhibited better sensitivity (J(UV)/J(Dark) = 5.65; J(Visible)/J(Dark) = 1.35) to UV light (365 nm, 0.3 mW/cm(2)) than those with the as-grown ZnO-NWs (J(UV)/J(Dark) = 4.98; J(Visible)/J(Dark) = 3.82) because the structural defects in ZnO-NWs were effectively eliminated after annealing in nitrogen ambient at 500 degrees C. (C) 2015 The Japan Society of Applied Physics
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